Semiconductor industry has achieved the most outstanding and fastest accomplishment within the last forty years since 1961. With the demand and evolution of technology in 3C market, the size of components will have to enter the scale of nanometer generation from micrometer to provide the improvement in speed, power, integration, and density. The feature size has advances from 250 nm, 180 nm, 130nm, and into the new 90 nm generation. ITRS forecasted that the 90 nm product will enter volume production in 2004. All global leading manufacturers are now aggressively engaging in this new manufacturing process. Companies such as Intel, IBM, TI, Toshiba, TSMC, and UMC, etc. have all started deploying 90 nm manufacturing process since 2003 in hope for the market winner. They have also all actively invested in the research of sub-90 nm manufacturing process to prepare for the forth-coming new generation.
This book discusses five technologies including Low dielectric constant material, Silicon on Insulator (SOI), MRAM, Atomic Layer Deposition (ALD), and EUV. The patent map, scientific literatures, and research projects are used for analysis to provide research topics related to nanometer electronics for the national scientific planning.. The global technological development trend is evaluated as the reference material for our country in setting policies for forward-looking technological research.